EFFICIENT SILICON NITRIDE SiNx:H ANTIREFLECTIVE AND PASSIVATION LAYERS DEPOSITED BY ATMOSPHERIC PRESSURE PECVD FOR LOW COST PERC SOLAR CELLS
Résumé
This work demonstrates the efficient optical and passivation properties provided by hydrogenated silicon nitride (SiNx:H) layers deposited in a lab-scale atmospheric pressure (AP) PECVD reactor, meeting all requirements for the in-line realization of high efficiency PERC solar cells. Good thickness and optical constant homogeneities were achieved by applying modulated low frequency plasma (200 kHz). The use of voltage amplitude modulation enabled discharge optimization and led to greatly enhanced SiNx film homogeneity and conformity. Low effective reflectivity Reff = 2.8% was consequently achieved on alkaline textured surface. Additionally, AP-PECVD SiNx showed good thermal stability and low absorption coefficient, demonstrating that such layers could act as efficient antireflective coatings. Besides, outstanding surface passivation properties were obtained after firing, both on n-type FZ c-Si substrates of standard doping (τeff = 1.45 ms) and on highly doped n + emitters (j0e = 74±2 fA.cm -2 ). Finally, AP-PECVD SiNx thin films were tested on industrial PERC-type solar cell architectures, which demonstrated the potential of applying these layers both as efficient rear-side capping layer and front-side antireflective coating. The first PERC solar cell results featuring AP-PECVD SiNx layers pave the way for upscaling the Dielectric Barrier Discharge lab-scale reactor in an industrial in-line process able to provide low cost and high throughput SiNx capping and antireflective layers.
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Sciences de l'ingénieur [physics]Origine | Fichiers produits par l'(les) auteur(s) |
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